FEATURES

● V DS =60V,ID =50ARDS(ON) <11mΩ @ VGS=10V

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

 

 

Application

(1) Power switching application  (2) Hard Switched and High Frequency Circuits  (3)Uninterruptible Power Supply